| abstract |
The purpose of the present invention is to provide a selective modification method for base material surfaces and a composition, whereby a surface region including silicon can be modified simply and highly selectively and densely. This selective modification method for base material surfaces comprises: a step in which a base material is prepared that has a first region including silicon, on a surface layer thereof; a step in which a composition is coated on the surface of the base material, said composition including a solvent and a first polymer that has, at the terminal of the main chain or a side chain thereof, a group including a first functional group that bonds with the silicon; and a step in which a coating film formed by the coating step is heated. The first region ideally includes a silicon oxide, a silicon nitride, or a silicon oxide nitride. Ideally, the base material also has a second region different from the first region and including metal, and the selective modification method also comprises a step, after the heating step, in which a section formed on the second region in the coating film is removed by using a rinse fluid. |