| abstract |
Provided is a technology having: a step for treating, in a treatment chamber, a substrate at a first temperature, said substrate being held in a substrate holding region of a substrate holding unit that has a heat insulating region on one end side, and the substrate holding region on the other end side; a first cleaning step for supplying, at a second temperature, the heat insulating region with a cleaning gas after carrying out the substrate, said second temperature being lower than the first temperature but higher than the room temperature; and a second cleaning step for supplying, at a third temperature, the substrate holding region with a cleaning gas after carrying out the substrate, said third temperature being lower than the second temperature. |