http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113355653-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2fb272959740a2231f287ac6bf4d190a |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67017 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45527 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67253 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02263 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-345 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-402 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4408 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4405 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4412 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44 |
| filingDate | 2021-03-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_14f6055e02f9f2458d4c2438530ec900 |
| publicationDate | 2021-09-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-113355653-A |
| titleOfInvention | Cleaning method, manufacturing method of semiconductor device, substrate processing apparatus, and storage medium |
| abstract | The present invention provides a technique capable of improving the cleaning efficiency in a processing chamber, which removes deposits adhering to the processing chamber by performing a cycle of sequentially performing the following steps for a predetermined number of times: (a) in a state where the exhaust gas in the processing chamber is stopped, supplying the clean gas into the processing chamber until the pressure in the processing chamber rises to the first pressure band; (b) simultaneously exhausting the processing chamber and supplying the cleaning gas into the processing chamber to maintain the pressure in the processing chamber at the first pressure band and (c) exhausting the processing chamber until the pressure in the processing chamber becomes a second pressure lower than the first pressure band while the supply of the cleaning gas into the processing chamber is stopped. |
| priorityDate | 2020-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 54.