| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_12d24c0a12c3ecdb6d9a47d623d96e76 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0653
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823487
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823481 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7804
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0629
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7815
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-085 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 |
| filingDate |
2017-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2044135a3974a442745a2c57cd5dcbbe
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fca60b80273aeeff9dace12e2337acc6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_231b0372cbfe7d3d3249fb93968d24e1 |
| publicationDate |
2017-12-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2017208735-A1 |
| titleOfInvention |
Semiconductor device |
| abstract |
A current sense section (30) that detects overcurrent of a main semiconductor element (10) is disposed on a silicon carbide base body (100) on which the main semiconductor element (10) is also disposed. An isolating section (60) is disposed between the main semiconductor element (10) and the current sense section (30). The isolating section (60) has a function of suppressing electrical interference between the main semiconductor element (10) and the current sense section (30) on the side of the silicon carbide base body (100). The isolating section (60) is configured from a trench (61) that is provided at a predetermined depth from the front surface of the silicon carbide base body (100). In the trench (61), an insulating film (62) is provided along the inner wall of the trench (61), and a polysilicon layer (63) is provided on the inner side of the insulating film (62). Consequently, withstand voltage deterioration of the current sense section (30) can be eliminated. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2020098872-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7243173-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7305979-B2 |
| priorityDate |
2016-06-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |