| abstract |
This method comprises: a first step for forming, with a plasma of a treatment gas generated in a treatment container, an etching assistance layer ML on the surface of at least one of a plurality of silicon-containing regions R1, R2, R3; and a second step for applying energy to the etching assistance layer ML. The energy is greater than or equal to energy with which the etching assistance layer ML is removed and is smaller than energy with which a region located immediately below the etching assistance layer ML is sputtered. The sequence including the first step and the second step is executed repeatedly. |