| abstract |
The invention relates to a method for producing a circuit carrier (10), in particular a lead frame or a conductive track, for a semiconductor component (90), wherein at least one first copper layer (20) or first copper alloy layer having a first expansion coefficient and at least one second layer (30) made of a second, low-stretch material (M2) having a second expansion coefficient which is smaller than the first expansion coefficient are bonded to each other at a bonding temperature of 150°C - 300°C, in particular by a low-temperature sintering method. |