http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2017059017-A1

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filingDate 2016-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2017-04-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2017059017-A1
titleOfInvention Methods for atomic level resolution and plasma processing control
abstract Methods and apparatus for processing substrates are provided. In some embodiments, methods of processing substrates includes: (a) providing a process gas comprising a polymer-forming gas and an etching gas between a first electrode and a second electrode within the processing volume, wherein the first electrode is opposite the second electrode; (b) applying a first voltage waveform from a first RF power source to the second electrode to form a plasma from the process gas, wherein the plasma has a first ion energy to deposit a polymer layer directly atop a dielectric layer of the substrate; and (c) adjusting the first voltage waveform to a second voltage waveform to increase an ion energy of the plasma from the first ion energy to a second ion energy, wherein the plasma at the second ion energy ceases to deposit the polymer layer and proceeds to etch the polymer layer and the dielectric layer.
priorityDate 2015-10-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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