| abstract |
Provided is a method for cleaning a substrate treatment device that etches films containing metal, wherein the cleaning method has: a first cleaning step for removing carbon-containing deposits using a plasma generated from a gas that includes a hydrogen-containing gas; a second cleaning step following the first cleaning step, for removing metal-containing deposits using a plasma generated from an inert gas; and a third cleaning step following the second cleaning step, for removing silicon-containing deposits using a plasma generated from a gas that includes a fluorine-containing gas and an oxygen-containing gas. |