Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76832 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02167 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0214 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5329 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53295 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0234 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02145 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-452 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02178 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45523 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
filingDate |
2015-11-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1630bc6d1ff62c2cd051c5b8a9cba5b9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6a90fd04bd09871e0d2b239896730b1a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5a0a335c982b4ff9dc6bf07a8a25ae62 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_157a44235e9aeb86255b4f29e6ef2543 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ce9859ae1c6cc8574a2f4b767f14b8f8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dcd79d955774624a15dd5459e5de68aa |
publicationDate |
2016-06-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
WO-2016099755-A1 |
titleOfInvention |
Ultra-thin dielectric diffusion barrier and etch stop layer for advanced interconnect applications |
abstract |
Implementations described herein generally relate to the formation of a silicon and aluminum containing layer. Methods described herein can include positioning a substrate in a process region of a process chamber; delivering a process gas to the process region, the process gas comprising an aluminum-containing gas and a silicon-containing gas; activating a reactant gas comprising a nitrogen-containing gas, a hydrogen containing gas, or combinations thereof; delivering the reactant gas to the process gas to create a deposition gas that deposits a silicon and aluminum containing layer on the substrate; and purging the process region. The above elements can be performed one or more times to deposit an etch stop stack. |
priorityDate |
2014-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |