http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2016042898-A1

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publicationDate 2016-03-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2016042898-A1
titleOfInvention Semiconductor device manufacturing method, coating formation method, and coating formation device
abstract In the present method, a substrate to be processed, having an interlayer insulation film, is prepared (step 1); the interlayer insulation film is subjected to dry etching, while using an intervening mask layer, thereby forming recessed parts (step 2); residue is removed by dry ashing (step 3); a coating is formed on the entire surface by means of a gas process using a coating-use compound gas, with a molecular structure having at one terminal a first substitution group that reacts with and bonds with the surface of the interlayer insulation film, and at the other terminal a second substitution group that is hydrophilic (step 4); the coating is removed by wet cleaning (step 5); and wiring is formed in the recessed parts (step 6).
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