| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fcc0b66123940d1b32783569ebfa2d45 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K3-18 |
| filingDate |
2005-03-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_92fc605b2e3b56d292a0e3edd1c387a1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bad9357e3e7579904cee788becdc26f8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3cdc5676007ef9b809bd4bbc90547924 |
| publicationDate |
2006-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2006261490-A |
| titleOfInvention |
Surface hydrophobization method, semiconductor device and method for manufacturing the same |
| abstract |
A semiconductor device including a layer subjected to surface hydrophobization treatment by a surface hydrophobizing method and a method for manufacturing the same are provided. An insulating film is formed above a substrate, and a concave portion is provided in the insulating film by reactive ion etching or the like. Since damage occurs on the inner wall 22 a of the recess 22, the hydrophobic film 24 is formed on the inner wall 22 a of the recess 22. The surface hydrophobization method includes (A) bringing diacetoxymethylsilane into contact with the surface of the layer, and (B) bringing the aprotic solvent into contact with the surface and heating the layer. [Selection] Figure 1 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009076855-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2016042898-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016063141-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007254594-A |
| priorityDate |
2005-03-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |