| abstract |
[Problem] To provide a technology that, when forming a film by supplying TiCl 4 gas and NH 3 gas a plurality of times in alternation to a substrate, can increase the amount of N 2 gas flow while suppressing cooling of a valve device (1), and can thus contribute to an increase in throughput. [Solution] When forming a film by supplying TiCl 4 gas and NH 3 gas a plurality of times in alternation to a substrate, the N 2 gas for atmosphere replacement supplied into a processing vessel (10) between supplying one processing gas and supplying the other processing gas is heated ahead of time. As a result, the flow rate of N 2 gas can be increased while suppressing cooling of the gas-contacting sites such as a wafer (W) and the inner wall of the processing vessel (10), and so it is possible to reduce the time necessary to replace the atmosphere, resulting in being able to contribute to increased throughput, and problems such as adhesion of reaction products due to cooling at the valve device (1) are suppressed. |