| abstract |
By means of a vapor phase growth method, the present invention produces a high-quality group-III nitride crystal that has few defects such as strain, dislocations, and warping and has a large size. This method for producing a group-III nitride crystal includes: a first step for group-III nitride crystal production that produces a first group-III nitride crystal (1003) by means of a liquid phase growth method; and a second step for group-III nitride crystal production that produces a second group-III nitride crystal (1004) on the first crystal (1003) by means of a vapor phase growth method. The method for producing a group-III nitride crystal is characterized in that in the first step for group-III nitride crystal production, the surfaces of a plurality of seed crystals (1003a) of a group-III nitride prepared ahead of time are contacted to an alkali metal melt, the group-III element and nitrogen are caused to react in the alkali metal melt in an atmosphere containing nitrogen, and by means of the growth of the plurality of group-III nitride crystals grown from the plurality of seed crystals (1003a), the plurality of group-III nitride crystals are joined to result in the first crystal (1003). |