| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5e5c121269689cbab9b3a4548b15caf3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_063a1b324005ddc15e16e7529c6258c4 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-403
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B19-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B19-12 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B19-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B19-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B19-02 |
| filingDate |
2020-02-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2022-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f3cd04ffcd49c556aa01cb83f76151d9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a3fed0c6287bc58abe473d418ef42f4c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a86aaa2edbe57a355a087c06a314b47f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_958081aba4b2eabc0710b87205d01868
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fd0ecd5b2c197d65b269d91417b1577a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_84b10559a0e1ae3523f866152acfbb1f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f52c7670d8978f27d8bdf528f21b1c7c |
| publicationDate |
2022-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-11220759-B2 |
| titleOfInvention |
Method of manufacturing a group III-nitride crystal comprising a nucleation step, a pyramid growth step, a lateral growth step, and a flat thick film growth step |
| abstract |
A method of manufacturing a group-III nitride crystal includes: a seed crystal preparation step of preparing a plurality of dot-shaped group-III nitrides on a substrate as a plurality of seed crystals for growth of a group-III nitride crystal; and a crystal growth step of bringing surfaces of the seed crystals into contact with a melt containing an alkali metal and at least one group-III element selected from gallium, aluminum, and indium in an atmosphere containing nitrogen and thereby reacting the group-III element with the nitrogen in the melt to grow the group-III nitride crystal. |
| priorityDate |
2019-02-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |