| abstract |
An etchant composition according to an embodiment of the present invention comprises: based on the total weight of the etchant composition, 0.5 wt% to 20 wt% of persulfate, 0.01 wt% to 1 wt% of a fluorine compound, 1 wt% to about 10 wt% of an inorganic acid, 0.01 wt% to 2 wt% of an azole-based compound, 0.1 wt% to 5 wt% of a chlorine compound, 0.05 wt% to 3 wt% of copper salt, 0.01 wt% to 5 wt% of a sulfating agent or a salt of the sulfating agent, and water of which the weight is such that the total weight of the entire composition reaches 100 wt%. The etchant composition can be used to form a metal wire or manufacture a thin film transistor substrate by etching a metal film containing copper. |