http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2014198617-A1

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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2628
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filingDate 2014-06-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2df29d1d4d3e53778b63235855a23131
publicationDate 2014-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2014198617-A1
titleOfInvention Provision of information on an ageing status of a semiconductor component
abstract The invention is intended to make it possible to determine the ageing status of a specific power semiconductor more reliably. For this purpose, a temperature-voltage characteristic curve of the semiconductor component (IGBT 1) is determined (S1) and a reference resistance value of the thermal resistance of the semiconductor component is determined (S2) before initial operation of the semiconductor component. After initial operation, a temperature increase of the semiconductor component upon heating is determined (S3, S4) in order to determine (S5) a current thermal resistance value. Subsequently a difference between the current thermal resistance value and the reference resistance value is determined (S6) and information regarding the ageing status is output (S7) on the basis thereof.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106885986-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019502913-A
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106885986-A
priorityDate 2013-06-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 24.