| abstract |
This semiconductor device is provided with: a first substrate (101) in which a first surface layer (112) including a first electrode (122) is provided; an extended second substrate (102) which is provided with a second surface layer (132) including a second electrode (142), and which is directly bonded to the first substrate (101) such that the second surface layer (132) is in contact with the first surface layer (112); and a through electrode (113) which passes through the first substrate (101) or a second substrate (131). The second surface layer (132) is provided upon an extended second main surface (172A) configured from the second substrate (131) and resin sections (135). The plane size of the second substrate (131) is smaller than that of the first substrate (101). The first electrode (122) and the second electrode (142) are in contact with and connected to each other. |