| abstract |
Provided is a composition for forming a silica-based insulating layer comprising hydrogenated polysilazane or hydrogenated polysiloxazane, and having a concentration of 1,200 ppm or less of a cyclic compound having a weight average molecular weight of 400 or less. The composition for forming a silica-based insulating layer may decrease thickness distribution during the formation of a silica-based insulating layer, thereby decreasing defects in layers after chemical mechanical polishing (CMP) process during the process of manufacturing a semiconductor. |