http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2014046858-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32357 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 2013-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_11cdfc8f017c8e4db0c41671cf4e030c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_94879ef4d212a86d39c2a2c1e747f063 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8073fab7bc6a8a78b49e72b9a6f881fd http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_22bcd094ebdfa82011177aed84e9bbc8 |
| publicationDate | 2014-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-2014046858-A1 |
| titleOfInvention | Silicon-carbon-nitride selective etch |
| abstract | A method of etching exposed silicon-nitrogen-and-carbon-containing material on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and an oxygen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions of silicon-nitrogen-and-carbon-containing material. The plasma effluents react with the patterned heterogeneous structures to selectively remove silicon- nitrogen-and-carbon-containing material from the exposed silicon-nitrogen-and-carbon- containing material regions while very slowly removing selected other exposed materials. The silicon-nitrogen-and-carbon-containing material selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region. The ion suppression element controls the number of ionically-charged species that reach the substrate. The methods may be used to selectively remove silicon-nitrogen-and-carbon- containing material at a faster rate than exposed silicon oxide or exposed silicon nitride. |
| priorityDate | 2012-09-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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