| abstract |
This plasma processing method executes an etching step (step S101) for supplying a fluorine-containing gas to a plasma processing space, and using fluorine-containing gas plasma to etch a substrate to be processed to which a silicon nitride film or silicon oxide film has been formed at the surface of a nickel silicide film. Next, the plasma processing method executes a reduction step (step S102) for supplying a hydrogen-containing gas to the plasma processing space, and using hydrogen-containing gas plasma to reduce an adhered nickel-containing material after the etching step with respect to a member disposed in a manner such that the surface thereof faces the plasma processing space. Next, the plasma processing method executes an elimination step (step S103) for supplying an oxygen-containing gas to the plasma processing space, and using oxygen-containing gas plasma to eliminate the nickel obtained by reducing the nickel-containing material by means of the reduction step. |