| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32743
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67739
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32192
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02315
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32917
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32935
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67248
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32522 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-677
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate |
2013-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5c711d7d4fcb09d3c3120d721134274a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_14416c826396497ae4d3d460ae82087f |
| publicationDate |
2013-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2013176144-A1 |
| titleOfInvention |
Plasma processing device and plasma processing method |
| abstract |
A plasma processing device (PM1) includes a processing chamber (12) defining a plasma processing space (S), a stage (14) for placement of a wafer (W) to be processed, and a gas supplying system (38) for introducing the processing gas used in the plasma reaction into the plasma processing space (S). The plasma processing device (PM1) also includes a microwave generator (16) for supplying electromagnetic energy to convert the processing gas to plasma. In addition, the plasma processing device (PM1) includes a control unit (100) for performing a warm-up process in which processing gas and electromagnetic energy are supplied in a waferless state when a plasma process starting command has been issued for a wafer (W) placed on the wafer conveying stage outside of the processing chamber (12) and while the wafer (W) is being conveyed into the processing chamber (12). |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7267843-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102378049-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016027618-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11670490-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019103295-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20150070036-A |
| priorityDate |
2012-05-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |