http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2013126175-A1

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filingDate 2013-01-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_71f9d5a79ef0694630dc1df7382741c5
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publicationDate 2013-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2013126175-A1
titleOfInvention Atomic layer deposition lithography
abstract Methods and apparatus for performing an atomic layer deposition lithography process are provided in the present disclosure. In one embodiment, a method for forming features on a material layer in a device includes pulsing a first reactant gas mixture to a surface of a substrate disposed in a processing chamber to form a first monolayer of a material layer on the substrate surface, directing an energetic radiation to treat a first region of the first monolayer, and pulsing a second reactant gas mixture to the substrate surface to selectively form a second monolayer on a second region of the first monolayer.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017505987-A
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