| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6e710bc73e833b26a83acabe07527ffd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7bb1ac0effc475b4465efef5039e8c3f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_679fc7858d46067382eebecbd83c1596 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45523
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C8-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-401 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 |
| filingDate |
2011-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0c90f049a8e676bad9da0d927187ef39
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_016f584cf7ef73d5160d828de6d47427
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5cdff8669ee0ab818501a03985b1bda8 |
| publicationDate |
2012-05-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2012064491-A2 |
| titleOfInvention |
Process for lowering adhesion layer thickness and improving damage resistance for thin ultra low-k dielectric film |
| abstract |
An improved method for depositing an ultra low dielectric constant film stack is provided. Embodiments of the invention minimize k (dielectric constant) impact from initial stages of depositing the ultra low dielectric constant film stack by reducing a thickness of an oxide adhesion layer in the ultra low dielectric film stack, thereby lowering the thickness non-uniformity of the film stack to less than 2%. The improved process deposits the oxide adhesion layer and the bulk layer in the ultra low dielectric film stack at lower deposition rate and lower plasma density in combination with higher total flow rate, resulting in better packing/ordering of the co-deposited species during film deposition which causes higher mechanical strength and lower porosity. |
| priorityDate |
2010-11-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |