| abstract |
The purpose of the present invention is to provide a radiation-sensitive composition capable of forming a chemically amplified positive resist film which effectively responds to (extreme) far UV light such as a KrF excimer laser, an ArF excimer laser, or EUV, an X-ray such as synchrotron radiation, or an electron beam, has excellent nano-edge roughness, sensitivity, and resolution, and is capable of stably and highly accurately forming a micropattern. This radiation-sensitive composition comprises an acid-generating agent represented by general formula (1) and a solvent. (In the formula, R 0 groups each independently represent a hydrogen atom, a fluorine atom, or a substituted or unsubstituted monovalent organic group; R 1 represents a fluorine atom or a substituted or unsubstituted monovalent organic group or may be combined with R f or R 2 to form a cyclic structure; R 2 represents a fluorine atom or a substituted or unsubstituted monovalent organic group; R f represents a fluoromethylene group or a divalent fluoroalkylene group; and M + represents a monovalent onium cation.) |