| abstract |
The disclosed film for the back surface of a flip-chip semiconductor is to be formed on the back surface of a semiconductor element that has been flip-chip connected onto an object, and is characterized in that the tensile storage modulus at 23°C after heat curing is from 10 GPa to 50 GPa. Because the disclosed flip-chip-semiconductor back-surface film is formed on the back surface of a semiconductor element that has been flip-chip connected onto an object, the film serves to protect the semiconductor element. Further, because the disclosed flip-chip-semiconductor back-surface film has a tensile storage modulus of 10 GPa or greater at 23°C after heat curing, the film can effectively inhibit or prevent the semiconductor element from warping at the time of flip-chip connecting the semiconductor element onto the object. |