| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e97285a06842ec7aaac3905b945e968e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2a6f06ca1e792b4f744a5e7d6e731c2e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5ea4b22e0127fd0ae841037118811680
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2f634b1c38989f5f2d3eeeb19fbc20c7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2487a1e52b7ff4c2f802c04c548b1688 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-13144
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-13091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-13055
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-1305
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05644
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1066
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-13
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05572
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-05
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-1033
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0629
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0605
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-00014
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-402
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-13062
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-085 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-48
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-485
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41725
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7786 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-085
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-485
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-48 |
| filingDate |
2011-04-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ca7c27638acc7f005e36dd3ff93f20eb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2fe6222ef1da892e876ae420a175194b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ed72cea18b30b53feec7fca7584586a2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0ce6bbc8e85c17f15d4d4277f3aba129 |
| publicationDate |
2011-10-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2011127568-A1 |
| titleOfInvention |
High density gallium nitride devices using island topology |
| abstract |
A Gallium Nitride (GaN) series of devices - transistors and diodes are disclosed - that have greatly superior current handling ability per unit area than previously described GaN devices. The improvement is due to improved layout topology. The devices also include a simpler and superior flip chip connection scheme and a means to reduce the thermal resistance. A simplified fabrication process is disclosed and the layout scheme which uses island electrodes rather than finger electrodes is shown to increase the active area density by two to five times that of conventional interdigitated structures. Ultra low on resistance transistors and very low loss diodes can be built using the island topology. Specifically, the present disclosure provides a means to enhance cost/effective performance of all lateral GaN structures. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9153509-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9818857-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3063792-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3063792-A4 |
| priorityDate |
2010-04-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |