http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2011116326-A1

Outgoing Links

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2572eea64db35863f24d0a92c50e0699
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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
filingDate 2011-03-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_00dd009af2ca6b280c0dee2483f18dc4
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publicationDate 2011-09-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2011116326-A1
titleOfInvention Through-silicon via fabrication with etch stop film
abstract For a semiconductor wafer substrate (102) having an inter layer dielectric (110), a through - silicon via may be formed in the substrate by first depositing an etch stop film (202) on top of the inter layer dielectric, followed by etching an opening (204) through the etch stop film, the interlayer dielectric, and into the substrate. A dielectric liner (206) is then deposited over the etch stop film and into the opening. For some embodiments, the dielectric liner may be etched away except for those portions adhering to the sidewall of the opening. Then a conductive material (208) may be deposited into the opening and on the etch stop film. The excess conductive material may then be removed, and for some embodiments the etch stop film may also be removed.
priorityDate 2010-03-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Predicate Subject
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008315418-A1
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isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID6327157
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID426098968

Total number of triples: 20.