| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c973d2b11024a6ee323a3a0527197c41
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3b48009250db80cbe8eb30065968dd87
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6d2d2db44289e4338beaf3e3f7a8de9b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_eecde1a404f2621d62b1968f6a32a38b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f8c82cf932bd5acc32b6434f11b54d16 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-345
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32357
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02109
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-452
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02326
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02337 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324 |
| filingDate |
2010-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_875390150e1c3c75b77f7902ff566b20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1faee471a2475ea563f802f1e1452e2e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5e4a6b780d17c5878271c2e295df17eb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d5b1100c435db06677b6b393d8e0fcd5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_71a95cd5e9e7548a6fd6cc72262fed98 |
| publicationDate |
2011-10-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2011090626-A3 |
| titleOfInvention |
Dielectric film growth with radicals produced using flexible nitrogen/hydrogen ratio |
| abstract |
Methods of forming dielectric layers are described. The method may include the steps of mixing a silicon-containing precursor with a radical-nitrogen precursor, and depositing a dielectric layer on a substrate. The radical-nitrogen precursor is formed in a remote plasma by flowing hydrogen (H2) and nitrogen (N2) into the plasma in order to allow adjustment of the nitrogen/hydrogen ratio. The dielectric layer is initially a silicon-and-nitrogen-containing layer which may be converted to a silicon-and-oxygen-containing layer by curing and/or annealing the film in an oxygen-containing environment. |
| priorityDate |
2009-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |