http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2011086929-A1

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filingDate 2011-01-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2011-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2011086929-A1
titleOfInvention Semiconductor substrate, electronic device, and method for producing semiconductor substrate
abstract Disclosed is a semiconductor substrate which comprises a base substrate having a surface that is composed of a silicon crystal, an SixGe1-xC epitaxial crystal (0 = x < 1) that is formed in a partial region on the silicon crystal, and a group III nitride semiconductor crystal that is formed on the SixGe1-xC epitaxial crystal (0 = x < 1). For example, the semiconductor substrate additionally comprises an inhibitor for inhibiting crystal growth, said inhibitor being formed on the silicon crystal and having an opening from which the silicon crystal is exposed, and the SixGe1-xC epitaxial crystal (0 = x < 1) is formed inside the opening.
priorityDate 2010-01-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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