http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2003068663-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_be055db3c1a09879df07379ba969e223 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-203 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B23-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-02 |
| filingDate | 2002-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1a7fc2b448b8a126d9e370bdc27d1a1f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_de15e8595d432abf982faed901db9aca http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_223b8fb22ce88acdf8b434010c52776f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_daf51f206fc82e5c5406c4d2035aaa79 |
| publicationDate | 2003-03-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2003068663-A |
| titleOfInvention | Manufacturing method of semiconductor crystal film |
| abstract | (57) Abstract: providing A high Ge manufacturing method of a semiconductor crystal film made of Si 1-xy Ge x C y layer containing a high proportion of lattice positions C while having content. SOLUTION: A source gas and atomic hydrogen are alternately supplied on a substrate on which a crystal is grown. By exposing atomic hydrogen to the substrate, the proportion of Ge atoms to which H atoms are attached among Ge atoms present on the outermost surface where growth is occurring is increased as compared to before atomic hydrogen exposure. Ge on the top surface When an H atom is attached to an atom, a phenomenon occurs in which the Ge atom and the Si atom existing in the lower layer are exchanged. A greater percentage of Ge atoms will be replaced by Si atoms than in conventional manufacturing methods that do not expose atomic hydrogen. As a result, Ge is formed on the outermost surface where the crystal is growing. The proportion occupied by atoms can be reduced, and C atoms that are incompatible with Ge atoms can easily enter the lattice position of the crystal. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102482578-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200017384-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2011086929-A1 |
| priorityDate | 2001-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 55.