http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2011055885-A1
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a06aaff7a63b48ca6b24607c705681af http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7a8d9e6e9d3b1e276fe1d20bbf034a35 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c938c1618c16ca9232b7ea584958f7ce |
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2203-0127 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2201-0257 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04R2201-003 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00158 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04R31-006 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H04R19-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-16 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H04R19-04 |
filingDate | 2010-02-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0dc18f74439dac37f140a154422e4500 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f0108474a75a40ed699208cee9e38936 |
publicationDate | 2011-05-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | WO-2011055885-A1 |
titleOfInvention | Mems microphone and method for manufacturing same |
abstract | The present invention relates to a MEMS microphone and to a method for manufacturing same, which are capable of precisely forming a gap between a membrane and a back plate by forming an air-gap-forming portion on a silicon substrate and then depositing the membrane and back plate thereon. Also, according to the MEMS microphone and method for manufacturing same, by manufacturing the membrane and/or back plate using an electroless plating process, the planarizing process of a sacrificial layer can be simplified, and reducing and controlling residual stress can be rendered easy. The MEMS microphone according to the present invention comprises: a silicon substrate defining a back chamber and an air-gap-forming portion formed by means of etching into a top of the back chamber up to a predetermined depth; a membrane deposited on the air-gap-forming portion of the silicon substrate or on the silicon substrate; and a back plate deposited on the air-gap-forming portion or on the silicon substrate so as to be separated from the membrane and to form a gap with the membrane for an air gap. |
priorityDate | 2009-11-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 36.