http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002328117-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N29-00
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filingDate 2001-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b8a87f8fac218c0037114f9b77413ec4
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publicationDate 2002-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2002328117-A
titleOfInvention Microphone for photoacoustic gas sensor and method of manufacturing the same
abstract (57) [Problem] To provide a microphone for a photoacoustic gas sensor having a simple configuration capable of increasing the detection sensitivity of the photoacoustic gas sensor. SOLUTION: A corrugated first electrode 21 provided so as to form a part of a wall surface of a cavity 10 is supported by a back plate 23 connected to the cavity, and a predetermined electrode is provided on the back side of the first electrode. A second electrode 22 that is opposed to the first electrode 22 at a distance. In particular, the first electrode is formed by using a corrugated shape obtained by anisotropically etching one surface of the Si substrate 11 for forming the cavity, and the sacrificial layer 16 is formed thereon. To form a second electrode and further form a back plate. Then, the Si substrate is selectively etched from the back side to expose the first electrode to form a cavity, and the sacrifice layer is removed by etching to complete the microphone.
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Total number of triples: 36.