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publicationDate 2011-05-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2011051251-A1
titleOfInvention Etching process for producing a tft matrix
abstract A thin film transistor (TFT) matrix for a liquid crystal display (LCD) can be prepared by performing several steps of forming layers, and several steps of partially etching layers. Fluorine and preferably carbonyl fluoride, preferably together with oxygen, N 2 O and/or argon, are used as etching gases. The invention also concerns a gas mixture consisting of F 2 or carbonyl fluoride, N 2 O and optionally argon.
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Total number of triples: 58.