| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_528c268d9355dc9476010fe7d79b0ef1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b9cc2d8f832624f015bd24bec47ef697
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8f30939e8701319aea6c757472e598d2 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-543
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-548
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-547
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-50 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y20-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02167
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1828
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-077
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-076
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-073
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0725
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-075
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-022441
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-022425
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02008 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0272 |
| filingDate |
2010-10-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_91bfc0a77b35323b996420a8a443ff4d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9499aac711f38806e0ea5c5fb35f7257 |
| publicationDate |
2011-04-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2011049933-A1 |
| titleOfInvention |
Back contact buffer layer for thin-film solar cells |
| abstract |
A photovoltaic cell structure is disclosed that includes a buffer/passivation layer at a CdTe/Back contact interface. The buffer/passivation layer is formed from the same material that forms the n-type semiconductor active layer. In one embodiment, the buffer layer and the n-type semiconductor active layer are formed from cadmium sulfide (CdS). A method of forming a photovoltaic cell includes the step of forming the semiconductor active layers and the buffer/passivation layer within the same deposition chamber and using the same material source. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9799784-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110400753-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2893568-A4
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10651323-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9496426-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9437760-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013019948-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10043922-B2 |
| priorityDate |
2009-10-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |