| abstract |
Disclosed are: a processing agent composition for semiconductor surfaces, which is capable of easily removing an antireflective film layer, a resist layer and a resist cured layer in a short time during the production procedure of a semiconductor element or the like; and a method for processing a semiconductor surface, which is characterized by using the processing agent composition. Specifically disclosed is a processing agent composition for semiconductor surfaces, which is characterized by containing (I) a compound which generates fluorine ions in water, (II) a carbon radical generator, (III) water, (IV) an organic solvent and (V) at least one compound selected from the group consisting of hydroxylamines and hydroxylamine derivatives represented by general formula (1). Also specifically discloses is a method for processing a semiconductor surface, which is characterized by using the processing agent composition.n(In the formula, R 1 represents a linear, branched or cyclic alkyl group with 1-6 carbon atoms or a linear or branched substituted alkyl group with 1-4 carbon atoms having 1-3 hydroxyl groups; and R 2 represents a hydrogen atom, a linear, branched or cyclic alkyl group with 1-6 carbon atoms or a linear or branched substituted alkyl group with 1-4 carbon atoms having 1-3 hydroxyl groups.) |