| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7ed59b5aa13301b04b3a0271f87fbb4a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c186e9ae8cafab5df5c8d80cfa7b0fa1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_75d3e551ce693881a4e3801a78f23dd0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ca0d0906229071aa1009c999fced2187
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f2a7ce848d6f9275b6a8f731a7a0da2c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c00c08af3d0d6afa9b95a5a6881efb85
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a6b62cf1a2023ddb65146d2102ffebe3 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S2304-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-34333
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-06 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0075
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y20-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-04 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-343
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate |
2010-01-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_00a9f65dedefdac737504511a688ea50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_35afa2678e2ff6b810e711ad13ca585f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b7f7af12a82bd503e723341cbb1b43a8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_02f96780b0db6af0d5637913449316da
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5fc7d2cc98cac2a54b79b7b146d32710
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fb75352d95564af12ebda09994fc4172 |
| publicationDate |
2010-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2010098163-A1 |
| titleOfInvention |
Light emitting element producing method and light emitting element |
| abstract |
Disclosed is a light emitting element producing method wherein a light emitting element for a group-III to V compound semiconductor having a quantum well structure containing In and N is produced. The light emitting element producing method is comprised of a step of forming a well layer (13a) containing In and N; a step of forming a barrier layer (13b), the band gap of which is wider than that of the well layer (13a); and a step of interrupting an epitaxial growth by supplying gas containing N between the step of forming the well layer (13a) and the step of forming the barrier layer (13b). In the interrupting step, gas having a degradation efficiency higher than the degradation efficiency obtained when N 2 and NH 3 are degraded to active nitrogen at 900°C is supplied. Further, in the interrupting step, gas different from a supply source which supplies N of the well layer (13a) is supplied. |
| priorityDate |
2009-02-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |