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filingDate 2008-06-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6141101eabc4ef9a60beaa724e92f12a
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publicationDate 2008-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2008211261-A
titleOfInvention Nitride semiconductor light emitting device
abstract Disclosed is a nitride semiconductor light-emitting device in which a nitride semiconductor growth layer with excellent surface flatness is formed by suppressing the occurrence of cracks. A nitride semiconductor substrate in which grooves and hills extending in stripes are formed on the upper surface thereof, and a nitride semiconductor growth portion comprising a plurality of nitride semiconductor layers stacked on the nitride semiconductor substrate; The height of the nitride semiconductor growth portion formed on the groove is lower than the height of the nitride semiconductor growth portion formed on the hill, and the nitride semiconductor near the edge of the hill It has an edge growth region raised on the surface of the growth part. [Selection] Figure 1
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