http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2010039284-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e2484c77d77924d6640c6039a57ed7bb http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fcc114d0782fc5ce2840142439d352c2 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6606 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-72 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-47 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-872 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate | 2009-04-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d4c6f082d6685829e9f3602b26e6c283 |
| publicationDate | 2010-04-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-2010039284-A1 |
| titleOfInvention | Silicon carbide barrier diode |
| abstract | Improved semiconductor devices are fabricated utilizing nickel gallide and refractory borides deposited onto a silicon carbide semiconductor substrate. Varying the deposition and annealing parameters of fabrication can provide a more thermally stable device that has greater barrier height and a low ideality. This improvement in the electrical properties allows use of Schottky barrier diodes in high power and high temperature applications. In one embodiment, a refractory metal boride layer is joined to a surface of a silicon carbide semiconductor substrate. The refractory metal boride layer is deposited on the silicon carbon semiconductor substrate at a temperature greater than 200 ∘ C. In another embodiment, a Schottky barrier diode is fabricated via deposition of nickel gallide on a SiC substrate. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109917261-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109917261-B |
| priorityDate | 2008-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.