| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ae372ddaa494f2face39592b0429cc16 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0014
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3054 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-32341
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-04253
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0421
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28575 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-30 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-042
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-323 |
| filingDate |
2005-11-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6f7b0e0fb98811bc4bafbf2adfcd4d65
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0d6e6d8efe119e7df96b4b526ff5d0f2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_146de9e61b99c783fbb2992bf7148c59 |
| publicationDate |
2006-05-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2006102920-A1 |
| titleOfInvention |
Thin film electrode for forming ohmic contact in light emitting diodes and laser diodes using nickel-based solid solution for manufacturing high performance gallium nitride-based optical devices, and method for fabricating the same |
| abstract |
Disclosed herein is a technique for forming a high quality ohmic contact utilizable in the fabrication of short-wavelength light emitting diodes (LEDs) emitting blue and green visible light and ultraviolet light, and laser diodes (LDs) using a gallium nitride (GaN) semiconductor. The ohmic contact is formed by depositing a nickel (Ni)-based solid solution on top of a p-type gallium nitride semiconductor. The ohmic contact thus formed has an excellent current-voltage characteristic and a low specific contact resistance due to an increased effective carrier concentration around the surface of the gallium nitride layer, as well as a high transmittance in the short-wavelength region. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2352184-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2352165-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2352184-A4
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2352165-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2010039284-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013302930-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9035323-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9818912-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8816356-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016155902-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022037852-A1 |
| priorityDate |
2003-05-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |