| abstract |
Disclosed is a connecting material that, even when joined at a curing temperature of 200°C or below without applying a load, has a high coefficient of thermal conductivity and has a satisfactory bonding strength even when a cured product is heated at 260°C. Also disclosed is a semiconductor device using the connecting material. The connecting material contains metal particles having an oxygen state ratio of less than 15% as measured by X-ray photoelectron spectroscopy. In particular, the connecting material contains metal particles subjected to treatment for removing an oxide film present on the surface thereof and to surface treatment with a surface protective material. |