| abstract |
Disclosed is a semiconductor light-emitting device comprising a substrate (101), a multilayer semiconductor structure (20) formed on the substrate (101) and including a light-emitting layer (105), a light-transmitting electrode (109) formed on the upper surface of the multilayer semiconductor structure (20), and a bonding layer (110) and a bonding pad electrode (107) formed on the light-transmitting electrode (109). The bonding pad electrode (107) has a multilayer structure including a metal reflection layer (107a) and a bonding layer (107c) sequentially arranged from the light-transmitting electrode (109) side, and the metal reflection layer (107a) is composed of a metal selected from the group consisting of Ag, Al, Ru, Rh, Pd, Os, Ir and Pt or an alloy containing the metal. |