http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2009102802-A2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B61-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11B5-855 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-161 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-15 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11B5-39 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11B5-84 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-10 |
| filingDate | 2009-02-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_28548119c51430be8fa9a4499abaf550 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_04280f5ca18b7180cce6cf6a03966268 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0683247d58d2154ba3942cb4df8065de http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1899c745676253e7e8f60a151ae5d54c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2b1a9815764f9fc4e295759de4ef5c5e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_92aca6788fe723ec21c500d54aa7aadf |
| publicationDate | 2009-08-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-2009102802-A2 |
| titleOfInvention | Magnetic domain patterning using plasma ion implantation |
| abstract | A method for defining magnetic domains in a magnetic thin film on a substrate, includes: coating the magnetic thin film with a resist; patterning the resist, wherein areas of the magnetic thin film are substantially uncovered; and exposing the magnetic thin film to a plasma, wherein plasma ions penetrate the substantially uncovered areas of the magnetic thin film, rendering the substantially uncovered areas non- magnetic. A tool for this process comprises: a vacuum chamber held at earth potential; a gas inlet valve configured to leak controlled amounts of gas into the chamber; a disk mounting device configured to (1 ) fit within the chamber, (2) hold a multiplicity of disks, spacing the multiplicity of disks wherein both sides of each of the multiplicity of disks is exposed and (3) make electrical contact to the multiplicity of disks; and a radio frequency signal generator electrically coupled to the disk mounting device and the chamber, whereby a plasma can be ignited in the chamber and the disks are exposed to plasma ions uniformly on both sides. This process may be used to fabricate memory devices, including magnetoresistive random access memory devices. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012014781-A |
| priorityDate | 2008-02-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 44.