http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2009041400-A1

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filingDate 2008-09-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_16a879c32edf919f7bd738468d47aaf8
publicationDate 2009-04-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2009041400-A1
titleOfInvention Negative resist composition and resist pattern-forming method using the same
abstract Disclosed is a negative resist composition which enables to improve performance of microphotofabrication using far ultraviolet light, particularly an ArF excimer laser having a wavelength of 193 nm. Specifically disclosed is a negative resist composition which hardly suffers from pattern collapses during fine pattern formation, while exhibiting good resolution. The negative resist composition is characterized by containing an alkali-soluble resin (A), a compound (B) including a low-molecular-weight compound having an oxethane structure having a molecular weight of not more than 2000, and a cationic photopolymerization initiator (C). Also specifically disclosed is a resist pattern-forming method using such a negative resist composition.
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2011043481-A1
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011059531-A
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