| abstract |
This invention provides a light emitting device comprising a luminescent element (2), which is a gallium nitride semiconductor, and a wavelength conversion part (3) which absorbs a part of primary light emitted from the luminescent element (2) and emits secondary light having a longer wavelength than the wavelength of primary light. The wavelength conversion part (3) comprises a divalent europium-activated nitride red-type luminescent phosphor substantially represented by (MI1-aEua)MIISiN3 as a red-type luminescent phosphor, and any one of phosphors selected from divalent europium-activated oxynitride green-type luminescent phosphors substantially represented by EubSicAldOeNf, divalent europium-activated oxynitride yellow-type luminescent phosphors substantially represented by MIIIgEuhSiiAljOkNl, and trivalent cerium-activated silicate green-type luminescent phosphors substantially represented by MIV3(MV1-mCem)2(SiO4)3, as a green-type or yellow-type luminescent phosphor. A light emitting device (1) comprising the luminescent element (2), in which the forward current applied to the luminescent element (2) is not less than 25 mA, has excellent service life properties, is highly reliable and highly efficient, and has excellent color rendering properties or color reproduction. |