| abstract |
This invention provides a method for pattern formation, comprising (1) the step of selectively exposing a first resist layer and then developing the exposed first resist layer to form a first pattern, (2) the step of coating a predetermined resin composition containing a resin containing hydroxyl groups, which, upon baking, can render the resin insoluble or sparingly soluble in a developing solution and a solvent, on a first pattern, baking the coating, and washing the baked coating to form a second pattern, and (3) the step of subjecting the second pattern to whole image exposure or selective exposure to render the second pattern partially soluble in a developing solution, then developing the pattern to form a third pattern comprising at least one of holes and grooves formed in the second pattern. |