| abstract |
Disclosed is a film-forming composition containing a silicone resin, which is in a solid state at 120˚C and has a rational formula represented by the formula (1) below, a hydrolysis-condensation product obtained by hydrolysis-condensation of a specific silane compound, and an organic solvent (F). (H2SiO)n(HSiO1.5)m(SiO2)k (1) (In the formula (1), n, m and k each represents a number, and when n + m + k = 1, n is not less than 0.05, m is more than 0 but not more than 0.95 and k is 0-0.2.) The film-forming composition can be suitably used for semiconductor devices for which higher integration and more number of lamination are required. This film-forming composition enables to easily obtain a desired relative dielectric constant when an insulating film is formed therefrom. |