| abstract |
The present invention relates to norbornene-based polysilsesquioxane copolymers, norbornene-based silane derivatives used for preparation of the same and a method of preparing an insulating film of a semiconductor device. The norbornene-based polysilsesquioxane copolymers of the present invention are prepared by hydrolyzing and condensation-polymerizing a kind of cyclic olefin, i.e. a predetermined norbornene-based silane derivative and a predetermined polysilsesquioxane precursor used as monomers in an organic solvent in the presence of an acid or base catalyst and water. The norbornene-based silane derivatives of the present invention have high reactivity and the norbornene-based polysilsesquioxane copolymers of the present invention prepared using the same, have excellent mechanical properties, thermal stability and crack resistance and a low dielectric constant, and thus can be effectively used as a material for an interlayer insulating film of a semiconductor device with a low dielectric constant. |