Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_16ebbf2b5f669829588fc45dd1118668 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8cf8d77ac0eff1767b22d2fb9445b64d http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2f257e14410bf8a38e1bae19608c3681 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_da1eca4375b85213141184827378d49f http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_db309613a158ecea3a7a1bf5d83dbc6a http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0d7e29d377ca71855697e48ae6d0d53e http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ccca7ad7a1814082c3bd5d0ed11825da |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76861 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-54 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67161 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67207 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1601 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1632 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C28-023 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-54 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D7-123 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D5-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-288 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C28-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C8-80 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C28-322 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C10-60 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76873 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C8-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C26-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C10-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76874 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76855 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76862 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D17-001 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
filingDate |
2007-12-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ec2c0130c405a9f5be1fd1ad620c1846 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d4f88514a75877a04c19be758319d61c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5d8cd8337e042bbd5e5fbe950489fd5a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7c01581e39579149846be9dbe5657414 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ceca8a77abbc45403cb2e2b4ffa76b7a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_174daf5c7eada11139ec477946cc8a4d |
publicationDate |
2008-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
WO-2008076677-A1 |
titleOfInvention |
Methods and systems for barrier layer surface passivation |
abstract |
This invention pertains to methods and systems for fabricating semiconductor devices. One aspect of the present invention is a method of depositing a gapfill copper layer onto barrier layer for semiconductor device metallization. In one embodiment, the method includes forming the barrier layer on a surface of a substrate and subjecting the barrier layer to a process condition so as to form a removable passivated surface on the barrier layer. The method further includes removing the passivated surface from the barrier layer and depositing the gapfill copper layer onto the barrier layer. Another aspect of the present invention is an integrated system for depositing a copper layer onto a barrier layer for semiconductor device metallization. In one embodiment, the integrated system comprises at least one process module configured for barrier layer deposition and passivated surface formation and at least one other process module configured for passivated surface removal and deposition of copper onto the barrier layer. The system further includes at least one transfer module coupled so that the substrate can be transferred between the modules substantially without exposure to an oxide-forming environment. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7592259-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7749893-B2 |
priorityDate |
2006-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |