Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d9f3ca41550d315642580237250c5b0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4d8e8ccdcde0dfa7ba93de94ae9ac6d1 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-854 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-345 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-402 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-407 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-405 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-805 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-844 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45525 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45555 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455 |
filingDate |
2007-10-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ded9ecd940c3392f60de4bb06f67aa0b |
publicationDate |
2008-05-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
WO-2008057180-A1 |
titleOfInvention |
Process for forming oled conductive protective layer |
abstract |
A process is disclosed for forming an OLED device, comprising: providing a substrate having a first electrode and one or more organic layers formed thereon, at least one organic layer being a light-emitting layer; forming a conductive protective layer over the one or more organic layers opposite the first electrode by employing a vapor deposition process comprising alternately providing a first reactive gaseous material and a second reactive gaseous material, wherein the first reactive gaseous material is capable of reacting with the organic layers treated with the second reactive gaseous material, wherein the temperature of the gaseous materials and organic layers are less than 140 degrees C while the gases are reacting and wherein the resistivity of the protective layer is greater than 106 ohm per square; and forming a second electrode over the conductive protective layer by sputter deposition. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2009042052-A3 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8529990-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2009042052-A2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8680563-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9130189-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102439197-A |
priorityDate |
2006-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |