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filingDate 2003-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7d31c3fbea6a38d622c294499ab19557
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publicationDate 2004-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2004049465-A2
titleOfInvention Transparent-cathode for top-emission organic light-emitting diodes
abstract A new transparent-charge-injection-layer consisting of LiF/Al/Al-doped-SiO has been developed as (i) a cathode for top emitting organic light-emitting diodes (TOLEDs) and as (ii) a buffer layer against damages induced by energetic ions generated during deposition of other functional thin films by sputtering, or plasma-enhanced chemical vapor deposition. A luminance of 1900 cd/m2 and a current efficiency of 4 cd/A have been achieved in a simple testing device structure of ITO/TPD (60 nm)/Alq3 (40 nm)/LiF (0.5 nm)/Al (3 nm)/Al-doped-SiO (30 nm). A thickness of 30 nm of Al-doped SiO is also found to protect organic layers from ITO sputtering damage.
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